SCR stacking structure with high holding voltage for high voltage power clamp
نویسندگان
چکیده
منابع مشابه
SCR-Stacking Structure with High Holding Voltage for I/O and Power Clamp
Abstract—In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed devi...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2011
ISSN: 1349-2543
DOI: 10.1587/elex.8.1260